HBC817

HI-SINCERITY MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature.......................................................................................................................... -55 to +150 °C Junction Temperature.................................................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCES Collector to Base Voltage.................................................................