CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
Spec. No. : C202S6R Issued Date : 2010.03.22 Revised Date : 2011.02.22 Page No. : 1/6
(dual transistors)
HBC8471S6R
Features
• Two BTC2412 chips in a SOT-363R package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low Cob. Typ. Cob=2.0pF. • Pb-free package.
Equivalent Circuit
HBC8471S6R
Outl.
NPN Transistor
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
Spec. No. : C202S6R Issued Date : 2010.03.22 Revised Date : 2011.02.22 Page No. : 1/6
(dual transistors)
HBC8471S6R
Features
• Two BTC2412 chips in a SOT-363R package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low Cob. Typ. Cob=2.0pF. • Pb-free package.
Equivalent Circuit
HBC8471S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : 150mW per element must not be exceeded.
HBC8471S6R CYStek Product Specification
http://www.Datasheet4U.com
Symbol VCBO VCEO VEBO IC PD Tj Tstg
Limits 60 50 6 200 200(total) 150 -55~+150
(Note)
Unit V V V mA mW °C °C
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE hFE fT Cob Min. 60 50 6 200 25 80 Typ. 160 2 Max. 100 100 0.3 1 560 4 Unit V V V nA nA V V MHz pF
Spec. No. : C202S6R Issued Date : 2010.03.22 Revised Date : 2011.02.22 Page No. : 2/6
Test Conditions IC=100μA IC=1mA IE=50μA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=150mA VCE=12V, IC=2mA, f=100MHz VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cy.