HI-SINCERITY
MICROELECTRONICS CORP.
HBC858
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6851 Issued Date : 1994.09.02 ...
HI-SINCERITY
MICROELECTRONICS CORP.
HBC858
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4
Description
The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings
SOT-23
Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................................................... +150 °C
Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW
Maximum
Voltages and Currents (TA=25°C) VCBO Collector to Base
Voltage ......................................................