HBP1037C6

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistors Spec. No. : C306C6 Issued Date : 2012.09.28 Revised Date : Page No. : 1/6 (dual transistors) HBP1037C6 Features Two BTA1037 chips in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Excellent hFE linearity Complementary to HBN2412C6 Equivalent Circuit HBP1037C6 Outline SOT-563 C1 B2 E2 Tr1 Tr2 E1 B1 C2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C, each transistor) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -100 -65 -6 -150 150(total) 150 -55~+150 Unit V V V mA mW °C °C *1 Note : *1 120mW per element must not be exceeded HBP1037C6 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C, each transistor) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) VBE VBE *hFE fT Cob Min. -100 -65 -6 -0.6 200 80 Typ. -0.12 110 2 Max. -0.1 -0.1 -0.2 -0.3 -0.4 -0.7 -0.76 450 3.5 Unit V V V μA μA V V V V V MHz pF Spec. No. : C306C6 Issued Date : 2012.09.28 Revised Date : Page No. : 2/6 Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-80V VEB=-6V IC=-10mA, IB=-0.5mA IC=-50mA, IB=-5mA IC=-100mA, IB...