HBP1037S6R

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBP1037S6R Spec. No. : C306S6R Issued Date : 2003.09.12 Revised Date : 2006.01.19 Page No. : 1/5 Features Two BTA1037 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Excellent hFE linearity Complementary to HBN2412S6R. Pb-free package Equivalent Circuit Outline HBP1037S6R SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -60 -50 -6 -150 200(total) 150 -55~+150 *1 Note : *1 150mW per element must not be exceeded Unit V V V mA mW °C °C HBP1037S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306S6R Issued Date : 2003.09.12 Revised Date : 2006.01.19 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -60 -50 -6 200 80 - Typ. -0.2 180 2 Max. -0.1 -0.1 -0.5 560 3.5 Unit V V V µA µA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Orderin...