HBR10100

R SCHOTTKY BARRIER DIODE HBR10100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 100 V 175 ℃ 0.7V （@Tj=125℃） z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications z z， z z， z（RoHS） FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection，High reliability zRoHS product TO-22O TO-22OBF TO-22OF TO-22OHF ORDER MESSAGE Order codes Marking Package HBR10100Z HBR10100 TO-220 HBR10100ZR HBR10100 TO-220 HBR10100F HBR10100 TO-220F HBR10100FR HBR10100 TO-220F HBR10100BF HBR10100 TO-220BF HBR10100BFR HBR10100 TO-220BF HBR10100HF HBR10100 TO-220HF HBR10100HFR HBR10100 TO-220HF Halogen Free NO YES NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev.)：201002I 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220) TC=125℃ (TO-220F TO-220BF TO-220HF) per device per diode IF(AV) Surge non repetitive forward current （ 8.3ms — JEDEC ） 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR10100 Value 100 Unit V 100 V 10 A 5 80 A 175 -40~+150 ℃ ...