R SCHOTTKY BARRIER DIODE
HBR10200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
200 V 175 ℃ 0.75V ...
R SCHOTTKY BARRIER DIODE
HBR10200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
200 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICATIONS
z High frequency switch power supply
z Free wheeling diodes, polarity protection applications
TO-22OC
z z, z z, z(RoHS)
FEATURES
zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction
Temperature zGuard ring for over
voltage
protection,High reliability zRoHS product
TO-22OHF
TO-22OF
ORDER MESSAGE
Order codes
Marking
Package
HBR10200C
HBR10200 TO-220C
HBR10200CR
HBR10200 TO-220C
HBR10200F
HBR10200 TO-220F
HBR10200FR
HBR10200 TO-220F
HBR10200HF
HBR10200 TO-220HF
HBR10200HFR HBR10200 TO-220HF
Halogen Free NO YES NO YES NO YES
Packaging Tube Tube Tube Tube Tube Tube
Device Weight 2.15 g(typ) 2.15 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ)
(Rev.):201003H
1/7
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter Repetitive peak reverse
voltage
Symbol VRRM
Maximum DC blocking
voltage
VDC
Average forward current
TC=150℃ (TO-220C)
TC=125℃ (TO-220F, TO-220HF)
per device
per diode
IF(AV)
Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method)
IFSM
Maximum junction temperature
Tj
Storage temperature range
TSTG
HBR10200
Value
200
Unit
V
200 V
10 A
5
80 A
175 -40~+150
℃ ℃
ELECTRICAL CHARACTERISTICS
Parameter IR
Tests conditions
Tj =25℃ Tj =125℃
VR=VRRM
Value(min) Value(t...