HBR15100

Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection，High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor HBR15100 APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Per Leg) (Total) Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 100 7.5 15 180 V A A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor HBR151...