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HBR16200CR

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16(2×8)A 200 V 175 ℃ 0.75V ...


Jilin Sino

HBR16200CR

File Download Download HBR16200CR Datasheet


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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16(2×8)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-22OC TO-22OHF TO-22OF ORDER MESSAGE Order codes Marking Package HBR16200C HBR16200 TO-220C HBR16200CR HBR16200 TO-220C HBR16200F HBR16200 TO-220F HBR16200FR HBR16200 TO-220F HBR16200HF HBR16200 TO-220HF HBR16200HFR HBR16200 TO-220HF Halogen Free NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Device Weight 2.15 g(typ) 2.15 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev.):201003G 1/7 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220C) TC=125℃ (TO-220F, TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR16200 Value 200 Unit V 200 V 16 A 8 120 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter IR Tests conditions Tj =25℃ Tj =125℃ VR=VRRM Value(min) Value(t...




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