HC114T

NPN DIGITAL T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC114T ¨€ APPLICATIONS Switching Circuit£¬ Interface Circuit. ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡300mW VCBO ¡ ª ¡ ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡50V VCEO ¡ª¡ª Collector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡50V VE B O ¡ ª ¡ ªEmitter -Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡5V IC¡ª¡ªCollector Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡100mA 1¨D Emitter£¬ E 2¨D Collector,C 3¨D Base£¬ B TO-92S ¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£© Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO HFE VCE(sat) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage 50 50 5 0.1 0.1 100 0.4 0.7 7.0 V V V ¦Ì A ¦Ì A V V V K¦¸ IC=50¦Ì A, IE=0 IC=1mA, IB=0 IE=50¦Ì A£¬ IC=0 VCB=50V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCE=5V, IC=0.1mA VCE=0.2V, IC=10mA VCE=10V,IC=5mA VCB=10V,f=1MHz 600 0.3 0.55 1.2 10 V I£¨ off £©Input Off Voltage V I£¨ on£© Input On Voltage R1 fT Cob Input Resistor Current Gain-Bandwidth Product Output Capacitance 0.8 3.0 13 250 3.7 MHz pF www.DataSheet4U.com www.DataSheet4U.com ...