HCD7N70S

HCD7N70S HCD7N70S 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 9 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.95 ȍ7\S#9GS=10V ‰ 100% Avalanche Tested June 2015 BVDSS = 700 V RDS(on) typ ȍ ID = 5.0 A D-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 700 5.0 3.2 13.0 ρ20 40 1.2 0.1 50 PD TJ, TSTG TL Power Dissipation (TC = 25୅) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 28 -55 to +150 300 Units V A A A V mJ A mJ V/ns W ୅ ୅ Thermal Resistance Characteristics Symbol Parameter RșJC Junction-to-Case RșJA Junction-to-Ambient* Soldering temperature, wave soldering Tsold only allowed at leads * When mounted on the minimum pad size recommended (PCB Mount) Typ. --- -- Max. 4.4 60.5 260 Units ୅/W ୅ క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡ HCD7N70S Electrical Characteristics TJ=25...