DATASHEET
HCS10MS
Radiation Hardened Triple 3-Input NAND Gate
FN2435 Rev 0.00 September 1995
Features
• 3 Micron Radi...
DATASHEET
HCS10MS
Radiation Hardened Triple 3-Input NAND Gate
FN2435 Rev 0.00 September 1995
Features
3 Micron Radiation Hardened SOS
CMOS
Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day
(Typ)
Latch-Up Free Under Any Conditions Military Temperature Range: -55oC to +125oC
Significant Power Reduction Compared to LSTTL ICs
DC Operating
Voltage Range: 4.5V to 5.5V
Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min
Input Current Levels Ii 5A at VOL, VOH
Description
The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate. A high on all inputs forces the output to a Low state.
The HCS10MS utilizes advanced
CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed,
CMOS/SOS Logic Family.
The HCS10MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
HCS05DMSR
-55oC to +125oC Intersil Class S Equivalent
14 Lead SBDIP
HCS05KMSR
-55oC to +125oC Intersil Class S Equivalent
14 Lead Ceramic Flatpack
HCS05D/ Sample
+25oC
Sample
14 Lead SBDIP
HCS05K/ Sample
+25oC
Sample
14 Lead Ceramic Flatpack
HCS05HMSR
+25oC
Die
Die
Pinou...