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HCT7000M Datasheet

Part Number HCT7000M
Manufacturers OPTEK
Logo OPTEK
Description N-Channel Enhancement Mode MOS Transistor
Datasheet HCT7000M DatasheetHCT7000M Datasheet (PDF)

Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features • 200mA ID • Ultra small surface mount package • RDS(ON) < 5Ω • Pin-out compatible with most SOT23 MOSFETS Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most.

  HCT7000M   HCT7000M






Part Number HCT7000M
Manufacturers TT
Logo TT
Description N-Channel Enhancement Mode MOS Transistor
Datasheet HCT7000M DatasheetHCT7000M Datasheet (PDF)

N-Channel Enhancement Mode MOS Transistor HCT7000M, HCT70000MTX, HCT7000MTXV Features:  200 mA ID  Ultra small surface mount package  RDS(ON) < 5Ω  Pin-out compatible with most SOT23 MOSFETS Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin  ceramic LCC package. Electrical characteris cs are similar to those of the JEDEC 2N7000.  The pin‐out and footprint matches  that of most enhancement mode MOS transistors.

  HCT7000M   HCT7000M







N-Channel Enhancement Mode MOS Transistor

Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features • 200mA ID • Ultra small surface mount package • RDS(ON) < 5Ω • Pin-out compatible with most SOT23 MOSFETS Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors built in SOT23 plastic packages. Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Power Dissipation (TA = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Power Dissipation (TS(1) = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW(2) Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C Thermal Resistance R∅ JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100o C/W Thermal Resistance R∅ JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


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