HD8205-LOW
N-Channel Enhancement Mode Power MOSFET
Description
The 8205-LOW uses advanced trench technology to provide...
HD8205-LOW
N-Channel Enhancement Mode Power
MOSFET
Description
The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D1 G1
G2
D2
S1 S2
Schematic diagram
Application
●Battery protection ●Load switch ●Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±10
6 25 1.5 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate
Voltage Drain Current
IDSS VDS=19.5V,VGS=0V
Min Typ Max Unit
20 21 --
1
V μA
1
Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold
Voltage
Drain-Source On-State Resistance
Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Cap...