HFA16TB120S

Bulletin PD -20605A rev. B 10/05 HFA16TB120S HEXFRED Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode (K) BASE + 2 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Benefits (N/C) 1 _ (A) 3 VR = 1200V VF(typ.)* = 2.3V IF(AV) = 16A Qrr (typ.)= 260nC IRRM(typ.) = 5.8A trr(typ.) = 30ns di(rec)M/dt (typ.)* = 76A/µs Description www.DataSheet4U.com International Rectifier's HFA16TB120S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink ...