HFA3127

DATASHEET HFA3046, HFA3096, HFA3127, HFA3128 Ultra High Frequency Transistor Arrays FN3076 Rev.16.00 Jan 24, 2019 The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers. Related Literature For a full list of related documents, visit our website: HFA3046, HFA3096, HFA3127, HFA3128 device pages Features NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz PNP current gain (hFE) . . . . . ....