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PD -2.463 rev. B 03/99
HFA60MC60C
HEXFRED
Features
Reduced RFI and EMI Reduced Snubbing Exte...
www.DataSheet4U.com
PD -2.463 rev. B 03/99
HFA60MC60C
HEXFRED
Features
Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters
TM
Ultrafast, Soft Recovery Diode
(ISOLATED BASE)
1
ANODE 1
2
COMMON CATHODE
3
ANODE 2
V R = 600V V F(typ.) = 1.1V IF(AV) = 60A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 170A/µs
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
TM
TO-249AA
Max.
600 50 24 200 220 125 50 -55 to +150
Absolute Maximum Ratings (per Leg)
Parameter
VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode
Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Units
V A µJ W °C
300 (0.063 in. (1.6mm) from case)
Thermal - Mechanical Characteristics
Parameter
RθJC RθCS Wt J...