HFA70NH60

PD -2.457 rev. B 02/99 HFA70NH60 HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE a d BASE CATHODE VR = 600V V F(typ.)ƒ = 1.2V IF(AV) = 70A Qrr (typ.) = 340nC IRRM(typ.) = 8.5A trr(typ.) = 33ns di(rec)M/dt (typ.)ƒ = 220A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM HALF-PAK Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current  Non-Repetitive Avalanche Energy ‚ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 600 126 63 400 220 310 125 -55 to +150 Units V A µJ W °C Thermal - Mechanical Characteristics Parameter RthJC RthCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight Mounting Torque „ Terminal Torque Vertical P...