HFA80FA120

www.DataSheet.co.kr Bulletin PD-20395 rev. A 01/02 HFA80FA120 HEXFREDTM Features Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly Ultrafast, Soft Recovery Diode VR = 1200V VF(typ) = 2.6V IF(AV) = 80A trr (typ) = 25ns Description/ Applications The dual diode series configuration (HFA80FA120) is used for output rectification or frewheeling/ clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. Absolute Maximum Ratings Parameters VR IF IFSM IFRM PD VISOL TJ, TSTG Cathode-to-Anode Voltage Continuous Forward Current, TC = 60°C Single Pulse Forward Current, TJ = 25°C Square wave, 20KHz, TC = 60°C Max Power Dissipation, TC = 100°C Max Power Dissipation, TC = 25°C RMS Isolation Voltage, Any Terminal to Case, t = 1 min Operating Junction and Storage Temperatures 71 178 2500 - 55 to 150 V °C W Per Leg Per Leg Max 1200 40 400 72 Units V A Maximum Repetitive Forward Current, Rated VR, Case Styles HFA80FA120 K2 A2 K1 A1 SOT-227 www.irf.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr HFA80FA120 Bulletin PD-20395 rev. A 01/02 Electrical Characteristics @ TJ = 25°C (unless other...