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HFB1N60
N-Channel MOSFET
Description
HFB1N60 Nov 2007 HFB1N60 600V N-Channel
MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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