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HFB1N60S Datasheet

Part Number HFB1N60S
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFB1N60S DatasheetHFB1N60S Datasheet (PDF)

HFB1N60S Sep 2009 HFB1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherw.

  HFB1N60S   HFB1N60S






Part Number HFB1N60
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFB1N60S DatasheetHFB1N60 Datasheet (PDF)

HFB1N60 Nov 2007 HFB1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.4 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 4.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwi.

  HFB1N60S   HFB1N60S







N-Channel MOSFET

HFB1N60S Sep 2009 HFB1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 0.3 0.18 1.2 ρ30 33 0.3 0.3 4.5 PD TJ, TSTG TL Power Dissipation (TA = 25ଇ) Power Dissipation (TL = 25ଇ) - Derate above 25ଇ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 0.9 2.5 0.02 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJL RșJA Parameter Junction-to-Lead Junction-to-Ambient Typ. --- Max. 50 140 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡ HFB1N60S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics .


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