HFC1N70

HFC1N70 Dec 2008 HFC1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 14.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-126 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 700 0.5 0.35 2.0 ±30 33 0.5 0.75 5.5 7.5 0.06 -55 to +150 300 * Drain current limited by junction temperature Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Parameter Junction-to-Ambient Typ. --- Max. 17 62.5 Units ℃/W ◎ SEMIHOW REV.A0,Dec 2008 HFC1N70 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Charact...