HFD2N65U_HFU2N65U
HFD2N65U / HFU2N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugg...
HFD2N65U_HFU2N65U
HFD2N65U / HFU2N65U
650V N-Channel
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5 ȍ7\S #9GS=10V 100% Avalanche Tested
May 2014
BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 1.8 A
D-PAK I-PAK
2
1 3
HFD2N65U
1 2 3
HFU2N65U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 1.8 1.1 7.2 ρ30 116 1.8 4.2 4.5
PD
TJ, TSTG TL
...