HFD3N80/HFU3N80
Dec 2005
HFD3N80/HFU3N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 2.5 A
FEATURES...
HFD3N80/HFU3N80
Dec 2005
HFD3N80/HFU3N80
800V N-Channel
MOSFET
BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 2.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD3N80
1 2 3
HFU3N80
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800 2.5 1.57 10 ±30 320 2.5 7.0 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 70 0.56 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.78 50 110
Units ℃/W
◎ SEMIHOW REV.A0,Dec 2005...