HFD4N50_HFU4N50
July 2005
HFD4N50 / HFU4N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 2.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD4N50
1 2 3
HFU4N50
1.Gate 2. Drain 3. Source
Ab.
N-Channel MOSFET
HFD4N50_HFU4N50
July 2005
HFD4N50 / HFU4N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 2.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD4N50
1 2 3
HFU4N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 2.6 1.64 10.4 ρͤ͑͡ 440 2.6 4.5 4.5
PD
TJ, TSTG TL
Total Power Dissipation (TA=25ఁ) * Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 45 0.36 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/ఁ͑ ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 2.7.