HFD5N40_HFU5N40
July 2005
HFD5N40 / HFU5N40
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 3.4 A
FEAT...
HFD5N40_HFU5N40
July 2005
HFD5N40 / HFU5N40
400V N-Channel
MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 3.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD5N40
1
2 3
HFU5N40
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ)
– Continuous (TC = 100ଇ)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400 3.4 2.15 13.6 ρ30 510 3.4 4.5 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ഒ͚ Power Dissipation (TC = 25ഒ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 45 0.36 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/ఁ͑ ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 2.78 50 11...