HFD5N60S_HFU5N60S
Sep 2009
HFD5N60S / HFU5N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 4.3 A
FE...
HFD5N60S_HFU5N60S
Sep 2009
HFD5N60S / HFU5N60S
600V N-Channel
MOSFET
BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 4.3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD5N60S
1
2 3
HFU5N60S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ)
– Continuous (TC = 100ଇ)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 4.3 2.5 17.2 ρ30 210 4.3 9.1 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ଇ) * Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.5 91 0.73 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/ଇ ଇ
ଇ
Thermal Resistance Characteristics
Symbol RșJC RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.37 50 110
Units ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·...