HFP10N60S

HFP10N60S Nov 2007 HFP10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A FEATURES q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ.) q Extended Safe Operating Area q Lower RDS(ON) : 0.67 Ω (Typ.) @VGS=10V q 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 9.5 5.7 38 ±30 700 9.5 15.6 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 156 1.25 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.8 -62.5 Units ℃/W ◎ SEMIHOW REV.A0,Nov 2007 HFP10N60S Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(O...