HFP10N60U
HFP10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Ro...
HFP10N60U
HFP10N60U
600V N-Channel
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ 7\S #9GS=10V 100% Avalanche Tested
Feb 2013
BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 9.5 6.0 38 ρ30 470 9.5 16.4 4.5
PD
Power Dissipation (TC = 25) - Derate above 25
164 1.32
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol RșJC RșCS RșJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 0.76
-62.5
Units V A A A V mJ A mJ
V/ns W
W/
Units
/W
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HFP10N60U
Package Marking and Odering Information
Device Marking Week Marking
Package
Packing
HFP10N60U
YWWX
TO-220
Tube
HFP10N60U
YWWXg
...
