HFP18N50U

HFP18N50U HFP18N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 58 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.22 ȍ7\S #9GS=10V ‰ 100% Avalanche Tested Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 ȍ ID = 18 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 18 11.4 72 ρ30 950 18 23.6 4.5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 236 1.89 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.53 -62.5 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͲΡΣ͑ͣͥ͑͢͡ HFP18N50U Package Marking and Odering Information Device Marking HFP18N50U HFP18N50U Week Marking YWWX YWWXg Package TO-220 TO-220 Packing Tube ...