HFP35N75
Dec 2008
HFP35N75
75V N-Channel MOSFET
BVDSS = 75 V RDS(on) typ= 24mΩ ID = 35 A
FEATURES
Originative New ...
HFP35N75
Dec 2008
HFP35N75
75V N-Channel
MOSFET
BVDSS = 75 V RDS(on) typ= 24mΩ ID = 35 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.024 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
75 35 25 140 ±30 580 35 12 5.5
PD
TJ, TSTG TL
Power Dissipation (TC = 25℃) - Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
120 0.8 -55 to +175
300
Units V A A A V mJ A mJ
V/ns W
W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθCS
RθJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 1.24
-62.5
Units ℃/W
◎ SEMIHOW REV.A0,Dec 2008
HFP35N75
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON...