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HFP4N90

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N-Channel MOSFET

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HFP4N90 March 2014 HFP4N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 4.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 30 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON)...


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HFP4N90

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