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HFP5N50U Datasheet

Part Number HFP5N50U
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFP5N50U DatasheetHFP5N50U Datasheet (PDF)

HFP5N50U HFP5N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested May 2012 BVDSS = 500 V RDS(on) typ ȍ ID = 5.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise spec.

  HFP5N50U   HFP5N50U






Part Number HFP5N50S
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFP5N50U DatasheetHFP5N50S Datasheet (PDF)

HFP5N50S OCT 2008 HFP5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 5.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 15.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise .

  HFP5N50U   HFP5N50U







N-Channel MOSFET

HFP5N50U HFP5N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested May 2012 BVDSS = 500 V RDS(on) typ ȍ ID = 5.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 5.0 3.2 20 ρ30 230 5.0 9.8 4.5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 98 0.78 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 1.28 -62.5 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΪ͑ͣͣ͑͢͡ HFP5N50U Package Marking and Odering Information Device Marking Week Marking Package Packing HFP5N50U YWWX TO-220 Tube HFP5N50U YWWXg TO-220 .


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