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HFP5N65S
N-Channel MOSFET
Description
HFP5N65S Oct 2009 HFP5N65S 650V N-Channel
MOSFET
BVDSS = 650 V RDS(on) typ = 2.3 ȍ ID = 4.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(O...
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