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HFP630

N-Channel Enhancement Mode Field Effect Transistor

Tstg Tj VD S S VDGR VG S ID PD Ta=25 (RGS=1M ) Tc=25 T c =25 Ta=25 N-Channel Enhancement Mode Field Effect Transistor ...

Shantou Huashan

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Description

Tstg Tj VD S S VDGR VG S ID PD
Ta=25
(RGS=1M ) Tc=25
T c =25
Ta=25
N-Channel Enhancement Mode Field Effect Transistor
HFP630
TO-220
55~150 55~150
200V 500V
±3 0 V
9 . 0A 72W
1G 2D 3S
µ ±
µ
±3 µ
...

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