HFP6N70U
HFP6N70U
700V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robu...
HFP6N70U
HFP6N70U
700V N-Channel
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ 7\S #9GS=10V 100% Avalanche Tested
March 2013
BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700 6.0 3.8 24.0 ρ30 170 6.0 15.0 4.5
PD
Power Dissipation (TC = 25) - Derate above 25
150 1.2
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol RșJC RșCS RșJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 0.84
-62.5
Units V A A A V mJ A mJ
V/ns W
W/
Units
/W
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HFP6N70U
Package Marking and Odering Information
Device Marking Week Marking
Package
Packing
HFP6N70U
YWWX
TO-220
Tube
HFP6N70U
YWWXg
...
