HFP730F_HFS730F
Dec 2016
HFP730F / HFS730F
400V N-Channel MOSFET
Features
Originative New Design Very Low Intrinsi...
HFP730F_HFS730F
Dec 2016
HFP730F / HFS730F
400V N-Channel
MOSFET
Features
Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant
HFP730F TO-220
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 400 6 0.8 13
HFS730F TO-220F
Symbol
Unit V A ȍ nC
S D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400 6.0 6.0 * 3.6 3.6 * 24 24 *
ρ30 250 6.0 7.6 4.5
PD
Power Dissipation (TC = 25) - Derate above 25
76 0.61
29 0.23
TJ, TSTG TL
Operating and Storage Temperature Range Maxim...