HFP7N80
June 2005
HFP7N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A
FEATURES
Originative...
HFP7N80
June 2005
HFP7N80
800V N-Channel
MOSFET
BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800 7.0 4.4 28 ρ30 580 7.0 16.7 4.5
PD
TJ, TSTG TL
Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
167 1.33 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W/ఁ ఁ
ఁ
Thermal Resistance Characteristics
Symbol RșJC RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ. -0.5 --
Max. 0.75
-62.5
Units ఁ͠Έ
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΟΖ͑ͣͦ͡͡
HFP7N80
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
...
