HFP9N80_HFS9N80
Oct 2016
HFP9N80 / HFS9N80
800V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 800 9 1.2 48
HFP9N80 TO-220
HFS9N80 TO-220F
Symbol
Unit V A ȍ nC
S D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-220
TO-220F.
800V N-Channel MOSFET
HFP9N80_HFS9N80
Oct 2016
HFP9N80 / HFS9N80
800V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 800 9 1.2 48
HFP9N80 TO-220
HFS9N80 TO-220F
Symbol
Unit V A ȍ nC
S D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800 9.0 9.0 * 5.7 5.7 * 36 36 *
ρ30 860 9.0 17.8 4.5
PD
Power Dissipation (TC = 25) - Derate above 25
178 1.42
59 0.48
TJ, TSTG .