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HFP9N80 Datasheet

Part Number HFP9N80
Manufacturers SemiHow
Logo SemiHow
Description 800V N-Channel MOSFET
Datasheet HFP9N80 DatasheetHFP9N80 Datasheet (PDF)

HFP9N80_HFS9N80 Oct 2016 HFP9N80 / HFS9N80 800V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 9 1.2 48 HFP9N80 TO-220 HFS9N80 TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F.

  HFP9N80   HFP9N80






800V N-Channel MOSFET

HFP9N80_HFS9N80 Oct 2016 HFP9N80 / HFS9N80 800V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 9 1.2 48 HFP9N80 TO-220 HFS9N80 TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 9.0 9.0 * 5.7 5.7 * 36 36 * ρ30 860 9.0 17.8 4.5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 178 1.42 59 0.48 TJ, TSTG .


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