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HFS10N65S

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N-Channel MOSFET

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HFS10N65S March 2014 HFS10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 29 nC (Typ.) ƒ Extended Safe Operating Area ƒ Lower RDS...


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HFS10N65S

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