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HFS11N80Z Datasheet

Part Number HFS11N80Z
Manufacturers SemiHow
Logo SemiHow
Description 800V N-Channel MOSFET
Datasheet HFS11N80Z DatasheetHFS11N80Z Datasheet (PDF)

HFP11N80Z_HFS11N80Z Oct 2016 HFP11N80Z / HFS11N80Z 800V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant ‰ Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 11 0.78 74 HFP11N80Z TO-220 HFS11N80Z TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified.

  HFS11N80Z   HFS11N80Z






800V N-Channel MOSFET

HFP11N80Z_HFS11N80Z Oct 2016 HFP11N80Z / HFS11N80Z 800V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant ‰ Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 11 0.78 74 HFP11N80Z TO-220 HFS11N80Z TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 11 11 * 6.9 6.9 * 44 44 * ρ30 970 11 21 4.0 PD Power Dissipation (TC = 25୅) - Derate above 25.


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