HFP11N80Z_HFS11N80Z
Oct 2016
HFP11N80Z / HFS11N80Z
800V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 800 11 0.78 74
HFP11N80Z TO-220
HFS11N80Z TO-220F
Symbol
Unit V A ȍ nC
S D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified.
800V N-Channel MOSFET
HFP11N80Z_HFS11N80Z
Oct 2016
HFP11N80Z / HFS11N80Z
800V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 800 11 0.78 74
HFP11N80Z TO-220
HFS11N80Z TO-220F
Symbol
Unit V A ȍ nC
S D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800 11 11 * 6.9 6.9 * 44 44 *
ρ30 970 11 21 4.0
PD
Power Dissipation (TC = 25) - Derate above 25.