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HFS13N50S Datasheet

Part Number HFS13N50S
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFS13N50S DatasheetHFS13N50S Datasheet (PDF)

HFS13N50S March 2014 HFS13N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 13 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 38 nC (Typ.) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7\S #9GS=10V ƒ 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless other.

  HFS13N50S   HFS13N50S






Part Number HFS13N50U
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFS13N50S DatasheetHFS13N50U Datasheet (PDF)

HFS13N50U HFS13N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 34 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 ȍ ID = 13 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise s.

  HFS13N50S   HFS13N50S







N-Channel MOSFET

HFS13N50S March 2014 HFS13N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 13 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 38 nC (Typ.) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7\S #9GS=10V ƒ 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 13* 8* 52* ρ30 560 13 19.5 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 48 0.39 -55 to +150 300 *Drain current limited by maximum junction temperature Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ. --- Max. 2.58 62.5 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡ HFS13N50S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions.


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