HFS18N50U
HFS18N50U
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
Apr 2014
BVDSS = 500 V RDS(on) typ = 0.22 ȍ ID = 18 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise .
N-Channel MOSFET
HFS18N50U
HFS18N50U
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
Apr 2014
BVDSS = 500 V RDS(on) typ = 0.22 ȍ ID = 18 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 18 * 11.4 * 72 * ρ30 950 18 3.7 4.5
PD TJ, TSTG TL
Power Dissipation (TC = 25) - Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
37 0.29 -55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol RșJC RșJA
Parameter Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 3.4 62.5
Units V A A A V mJ A mJ
V/ns W
W/
Units
/W
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HFS18N50U
Package Marking and Odering Information
Device Marking HFS18N50U HFS18N50U
Week Marking YWWX YWWXg
.