HGB029NE4SL , HGP029NE4SL
P-1
Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt ca...
HGB029NE4SL , HGP029NE4SL
P-1
Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability
◇ Enhanced Avalanche Ruggedness
◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit
◇ Power Tools
◇ UPS ◇ Motor Control
TO-263
45V N-Ch Power
MOSFET
VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited)
TO-220
45 V 2.2 mΩ 2.9 mΩ 2.5 mΩ 3.2 mΩ 182 A 120 A
Drain Pin2
Gate Pin 1
Part Number HGB029NE4SL HGP029NE4SL
Package Marking TO-263 GB029NE4SL TO-220 GP029NE4SL
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source
Voltage Gate to Source
Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power...