HGP045N10S , HGB045N10S
P-1
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Ava...
HGP045N10S , HGB045N10S
P-1
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
100V N-Ch Power
MOSFET
VDS RDS(on),typ TO-220 RDS(on),typ TO-263
ID (Sillicon Limited)
ID (Package Limited)
100 V 3.7 mΩ 3.4 mΩ 160 A 100 A
TO-263
TO-220
Drain Pin2
Gate Pin 1
Part Number HGP045N10S HGB045N10S
Package Marking TO-220 GP045N10S TO-263 GB045N10S
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source
Voltage Gate to Source
Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ T...