HGD029NE4SL
P-1
45V N-Ch Power MOSFET
Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode...
HGD029NE4SL
P-1
45V N-Ch Power
MOSFET
Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited)
45 2.5 3.2 156 70
V mΩ mΩ A A
TO-252
2
Drain Pin2 Gate Pin 1
Part Number HGD029NE4SL
Package Marking TO-252 GD029NE4SL
13
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source
Voltage Gate to Source
Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ TC=25...
