DatasheetsPDF.com

HGD045NE4SL Datasheet

Part Number HGD045NE4SL
Manufacturers Hunteck
Logo Hunteck
Description 45V N-Ch Power MOSFET
Datasheet HGD045NE4SL DatasheetHGD045NE4SL Datasheet (PDF)

HGD045NE4SL P-1 45V N-Ch Power MOSFET Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited) 45 3.5 4.6 114 70 V mΩ mΩ A A Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control TO-252 2 Drain Gate P.

  HGD045NE4SL   HGD045NE4SL






45V N-Ch Power MOSFET

HGD045NE4SL P-1 45V N-Ch Power MOSFET Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited) 45 3.5 4.6 114 70 V mΩ mΩ A A Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control TO-252 2 Drain Gate Part Number HGD045NE4SL Package Marking TO-252 GD045NE4SL 13 Src Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ TC=25℃ - L=0.3mH, T.


2019-04-02 : CSB400P    EN29LV320C    EN29GL064AT    EN29GL064AB    PE29102    PE43620    PE42525    uP9509    uP1707P    uP1590   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)