HGD045NE4SL
P-1
45V N-Ch Power MOSFET
Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability
◇ Enhanced Avalanche Ruggedness
◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited)
45 3.5 4.6 114 70
V mΩ mΩ A A
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit
◇ Power Tools
◇ UPS ◇ Motor Control
TO-252
2
Drain Gate
P.
45V N-Ch Power MOSFET
HGD045NE4SL
P-1
45V N-Ch Power MOSFET
Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability
◇ Enhanced Avalanche Ruggedness
◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited)
45 3.5 4.6 114 70
V mΩ mΩ A A
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit
◇ Power Tools
◇ UPS ◇ Motor Control
TO-252
2
Drain Gate
Part Number HGD045NE4SL
Package Marking TO-252 GD045NE4SL
13
Src
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ TC=25℃ -
L=0.3mH, T.