N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH25N120A
█ Applications
• Induction heating and Microwave o...
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH25N120A
█ Applications
Induction heating and Microwave oven Soft switching applications
█ Features
TO-3P
Low saturation
voltage, Vce(on)(typ)=2.1V@Vge=15V High input impedance Field stop trench technology offer superior
conduction and switching performances, High speed switching
█ Absolute Maximum Ratings
1―Gate,G 2―Collector,C 3―Emitter,E
Symbol
VCES VGES
IC
Description Collector to Emitter
Voltage Gate to Emitter
Voltage Collector Current(TC = 25℃)
Collector Current(TC = 100℃)
Ratings
1200 ±30 50
25
Units
V V A
A
ICM (1) Pulsed Collector Current
80 A
IF
Diode continuous Forward current (TC = 100℃)
15
A
Maximum Power Dissipation(TC =
PD
25℃) Maximum Power Dissipation(TC =
100℃)
200 80
W W
TJ
Operating Junction Temperature
-55~+150 ℃
Tstg Storage Temperature Range -55~+150 ℃
Maximum Lea...