HGB020NE4S , HGK020NE4S
P-1
HGP020NE4S
45V N-Ch Power MOSFET
Feature
◇ High Speed Power Switching ◇ Enhanced Body d...
HGB020NE4S , HGK020NE4S
P-1
HGP020NE4S
45V N-Ch Power
MOSFET
Feature
◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested
VDS RDS(on),typ RDS(on),typ RDS(on),typ
45 V TO-263 1.55 mΩ TO-247 1.75 mΩ TO-220 1.75 mΩ
◇ Lead Free Application
ID (Sillicon Limited) ID (Package Limited)
288 A 120 A
◇ Synchronous Rectification in SMPS
◇ Hard Switching and High Speed Circuit ◇ Power Tools
TO-263
TO-220
Drain Pin2
◇ UPS
◇ Motor Control
Gate Pin 1
Part Number HGB020NE4S HGK020NE4S HGP020NE4S
Package Marking TO-263 GB020NE4S TO-247 GK020NE4S TO-220 GP020NE4S
TO-247
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source
Voltage Gate to Source
Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Op...