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HGTG11N120CND Datasheet

Part Number HGTG11N120CND
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel IGBT
Datasheet HGTG11N120CND DatasheetHGTG11N120CND Datasheet (PDF)

HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the d.

  HGTG11N120CND   HGTG11N120CND






Part Number HGTG11N120CND
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel IGBT
Datasheet HGTG11N120CND DatasheetHGTG11N120CND Datasheet (PDF)

NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43 A, 1200 V HGTG11N120CND The HGTG11N120CND is a Non− Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189..

  HGTG11N120CND   HGTG11N120CND







Part Number HGTG11N120CND
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel IGBT
Datasheet HGTG11N120CND DatasheetHGTG11N120CND Datasheet (PDF)

HGTG11N120CND Data Sheet January 2000 File Number 4580.2 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The D.

  HGTG11N120CND   HGTG11N120CND







N-Channel IGBT

HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49303. Features • 43A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 340ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model www.fairchildsemi.com Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG11N120CND PACKAGE TO-247 BRAND 11N120CND NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810.


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